Hot carrier diffusion in graphene
نویسندگان
چکیده
منابع مشابه
Hot carrier diffusion in graphene
We report an optical study of charge transport in graphene. Diffusion of hot carriers in epitaxial graphene and reduced graphene-oxide samples are studied using an ultrafast pump-probe technique with a high spatial resolution. Spatiotemporal dynamics of hot carriers after a pointlike excitation are monitored. Carrier-diffusion coefficients of 11 000 and 5500 cm2 s−1 are measured in epitaxial gr...
متن کاملHot carrier-assisted intrinsic photoresponse in graphene.
We report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation (of wavelength 850 nanometers) at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse...
متن کاملHot-carrier convection in graphene Schottky junctions
Joaquin F. Rodriguez-Nieva, Mildred S. Dresselhaus, and Justin C. W. Song 1 Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 USA 2 Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA and 3 Walter Burke Institute for Theoretical Physics and Institute of Quantum Information and Matter, Californ...
متن کاملUltrafast hot-carrier-dominated photocurrent in graphene.
The combination of its high electron mobility, broadband absorption and ultrafast luminescence make graphene attractive for optoelectronic and photonic applications, including transparent electrodes, mode-locked lasers and high-speed optical modulators. Photo-excited carriers that have not cooled to the temperature of the graphene lattice are known as hot carriers, and may limit device speed an...
متن کاملSlow hot-carrier relaxation in colloidal graphene quantum dots.
Reducing hot-carrier relaxation rates is of great significance in overcoming energy loss that fundamentally limits the efficiency of solar energy utilization. Semiconductor quantum dots are expected to have much slower carrier cooling because the spacing between their discrete electronic levels is much larger than phonon energy. However, the slower carrier cooling is difficult to observe due to...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2010
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.82.195414